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The rapid innovations in advanced 2.5D and 3D packaging, complex interconnect schemes, and higher-performance power devices are creating unprecedented failure localization and analysis challenges. Defective semiconductor devices often show a variation in the local power dissipation, leading to local temperature increases. The Thermo Scientific ELITE System utilizes lock-in IR thermography (LIT) to accurately and efficiently locate these areas of interest and provide non-destructive 3D device insights. The ELITE System’s optics and InSb camera are specifically designed to achieve high localization resolution and sensitivity and solve the most difficult analytical challenges.

LIT, a form of dynamic IR thermography, provides maximum signal-to-noise ratio, increased sensitivity, and higher feature resolution compared to steady-state thermography. It is the ideal solution for the localization and analysis of line shorts, ESD defects, oxide damage, defective transistors, diodes, and device latch-ups. An optional laser scanning microscope enables high-resolution OBIRCH to complement the ELITE System’s thermal analysis capabilities.

The ELITE System is also available in the VX configuration, which provides all the features required for localizing defects in advanced power devices based on Si, SiC, or GaN technologies.

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    Key Features

    • Very high sensitivity, InSb camera, and thermal emission optics enable nondestructive, through-package, and stacked die analysis
    • Real-time lock-in measurement
    • Contactless absolute temperature mapping
    • Optical beam-induced resistance change (OBIRCH) option
    • High-voltage power device analysis option (VX)

    Specifications

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    Lateral resolution

    • Down to 1 μm

    Depth resolution

    • Down to 20 μm
    Defect types
    • Wide range of shorts (2 mΩ to 2 GΩ), leakage (power dissipation as low as 1 μW), resistive opens

    Sample types

    • Board assemblies, modules, packages, full wafers, wafer coupons, die

    FOV

    • Max 200 mm x 160 mm; min 0.62 mm x 0.51 mm

    DUT stimulation

    • Internal DC power supply; ATE, CA bus, boundary scan tester, system level tester
    • Up to 10 kV capable (requires VX option)

    Time to results

    • Minutes to seconds, depending on applied power and sample

    *Performance may vary depending on sample and specific setup.

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    Resources

    The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
    The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
    Sensitivity varies with power level
    Sensitivity varies with power level.
    The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
    The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
    Sensitivity varies with power level
    Sensitivity varies with power level.

    Applications

    Semiconductor Device Packaging

    Semiconductor Advanced Packaging

    Performance, power efficiency, area, and cost are driving packaging innovations. Learn how workflows provide fast, precise, and accurate time-to-data.

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    Semiconductor research and development

    Innovation starts with research and development. Learn more about solutions to help you understand innovative structures and materials at the atomic level.

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    Semiconductor metrology

    Manufacturing today’s complex semiconductors requires exact process controls. Learn more about advanced metrology and analysis solutions to accelerate yield learnings.

    Semiconductor Failure Analysis

    Semiconductor Failure Analysis

    Complex semiconductor device structures result in more places for defects to hide. Learn more about failure analysis solutions to isolate, analyze, and repair defects.

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    ESD Semiconductor Qualification

    Every electrostatic discharge (ESD) control plan is required to identify devices that are sensitive to ESD. We offer a complete suite of test systems to help with your device qualification requirements.

    Semiconductor power devices

    Semiconductor power devices

    Novel architectures and materials pose new challenges. Learn how to pinpoint faults and characterize materials, structures, and interfaces.

    Display Module Failure Analysis

    Semiconductor display technology

    Display technologies are evolving to improve display quality and light conversion efficiency. Learn how metrology, failure analysis, and characterization solutions provide insights.

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    Semiconductor materials characterization

    Many factors impact yield, performance, and reliability. Learn more about solutions to characterize physical, structural, and chemical properties.


    Techniques

    Thermal Fault Isolation

    Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).

    Learn more ›

    Thermal Fault Isolation

    Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).

    Learn more ›

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    Contact us

    Electron microscopy services for
    semiconductors

    To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.

    Learn more ›

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